Impacto da poluição luminosa nas aves marinhas da ilha Terceira

Dissertação de Mestrado em Gestão e Conservação da Natureza.

The SOS screen in Arabidopsis: a search for functions involved in DNA metabolism

The SOS screen, as originally described by Perkins et al. (1999), was setup with the aim of identifying Arabidopsis functions that might potentially be involved in the DNA metabolism. Such functions, when expressed in bacteria, are prone to disturb replication and thus trigger the SOS response. Consistently, expression of AtRAD51 and AtDMC1 induced the SOS response in bacteria, even affecting E. coli viability. 100 SOS-inducing cDNAs were isolated from a cDNA library constructed from an Arabidopsis cell suspension that was found to highly express meiotic genes. A large proportion of these SOS+ candidates are clearly related to the DNA metabolism, others could be involved in the RNA metabolism, while the remaining cDNAs encode either totally unknown proteins or proteins that were considered as irrelevant. Seven SOS+ candidate genes are induced following gamma irradiation. The in planta function of several of the SOS-inducing clones was investigated using T-DNA insertional mutants or RNA interference. Only one SOS+ candidate, among those examined, exhibited a defined phenotype: silenced plants for DUT1 were sensitive to 5-fluoro-uracil (5FU), as is the case of the leaky dut-1 mutant in E. coli that are affected in dUTPase activity. dUTPase is essential to prevent uracil incorporation in the course of DNA replication.

A new Salmonella typhimurium NM5004 strain expressing rat glutathione S-transferase 5-5 : use in detection of genotoxicity of dihaloalkanes using an SOS/umu test system

The Escherichia coli mu operon was subcloned into a pKK233-2 vector containing rat glutathione S-transferase (GST) 5-5 cDNA and the plasmid thus obtained was introduced into Salmonella typhimurium TA1535. The newly developed strain S.typhimurium NM5004, was found to have 52-fold greater GST activity than the original umu strain S.typhimurium TA1535/pSK1002. We compared sensitivities of these two tester strains, NM5004 and TA1535/ pSK1002, for induction of umuC gene expression with several dihaloalkanes which are activated or inactivated by GST 5-5 activity. The induction of umuC gene expression by these chemicals was monitored by measuring the cellular P-galactosidase activity produced by umuC'lacZ fusion gene in these two tester strains. Ethylene dibromide, 1-bromo-2-chloroethane, 1,2-dichloroethane, and methylene dichloride induced umuC gene expression more strongly in the NM5004 strain than the original strain, 4-Nitroquinoline 1-oxide and N-methyl-N'-nitro-N-nitrosoguanidine were found to induce umuC gene expression to similar extents in both strains. In the case of 1-nitropyrene and 2-nitrofluorene, however, NM5004 strain showed weaker umuC gene expression responses than the original TA1535/ pSK1002 strain, 1,2-Epoxy-3-(4'-nitrophenoxy)propane, a known substrate for GST 5-5, was found to inhibit umuC induction caused by 1-bromo-2-chloroethane. These results indicate that this new tester NM5004 strain expressing a mammalian GST theta class enzyme may be useful for studies of environmental chemicals proposed to be activated or inactivated by GST activity.

Chertezh zemlepol'zovahi︠ia︡ Komzet'a pri der. Kheǐrus, Seǐtlerskogo raǐona, Kr.A.S.SD.R., po proektu zemleustroǐstva 1930 g. po Ichkinskoǐ dache razverstani︠ia︡, v sos.tave Belokoshskogo sevooborotnogo uchastka

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SOS films and interfaces: chemical aspects

The possible chemical reactions that take place during the growth of single crystal films of silicon on sapphire (SOS) are analyzed thermodynamically. The temperature for the growth of good quality epitaxial films is dependent on the extent of water vapor present in the carrier gas. The higher the water vapor content the higher the temperature needed to grow SOS films. Due to the interaction of silicon with sapphire at elevated temperatures, SOS films are doped with aluminum. The extent of doping is dependent on the conditions of film growth. The doping by aluminum from the substrate increases with increasing growth temperatures and decreasing growth rates. The equilibrium concentrations of aluminum at the silicon-sapphire interface are calculated as a function of deposition temperature, assuming that SiO2 or Al6Si2O13 are the products of reaction. It is most likely that the product could be a solid solutio n of Al2O3 in SiO2. The total amount of aluminum released due to the interaction between silicon and sapphire will account only for the formation of not more than one monolayer of reaction product unless the films are annealed long enough at elevated temperatures. This value is in good agreement with the recently reported observations employing high resolution transmission electron microscopy.

Suramin is a potent and selective inhibitor of Mycobacterium tuberculosis RecA protein and the SOS response: RecA as a potential target for antibacterial drug discovery

In eubacteria, RecA is essential for recombinational DNA repair and for stalled replication forks to resume DNA synthesis. Recent work has implicated a role for RecA in the development of antibiotic resistance in pathogenic bacteria. Consequently, our goal is to identify and characterize small-molecule inhibitors that target RecA both in vitro and in vivo. We employed ATPase, DNA strand exchange and LexA cleavage assays to elucidate the inhibitory effects of suramin on Mycobacterium tuberculosis RecA. To gain insights into the mechanism of suramin action, we directly visualized the structure of RecA nucleoprotein filaments by atomic force microscopy. To determine the specificity of suramin action in vivo, we investigated its effect on the SOS response by pull-down and western blot assays as well as for its antibacterial activity. We show that suramin is a potent inhibitor of DNA strand exchange and ATPase activities of bacterial RecA proteins with IC50 values in the low micromolar range. Additional evidence shows that suramin inhibits RecA-catalysed proteolytic cleavage of the LexA repressor. The mechanism underlying such inhibitory actions of suramin involves its ability to disassemble RecA-single-stranded DNA filaments. Notably, suramin abolished ciprofloxacin-induced recA gene expression and the SOS response and augmented the bactericidal action of ciprofloxacin. Our findings suggest a strategy to chemically disrupt the vital processes controlled by RecA and hence the promise of small molecules for use against drug-susceptible as well as drug-resistant strains of M. tuberculosis for better infection control and the development of new therapies.

Efeitos genotóxicos e indução do SOS em mutantes derivados de Escherichia coli K-12 durante o processo de interação com superfícies bióticas e abióticas

A célula epitelial é o primeiro contato entre os micro-organismos e o hospedeiro. Essa interação pode levar a produção de diversas citocinas, quimiocinas, moléculas inflamatórias e também estimular a geração de espécies reativas de oxigênio (ERO). Neste trabalho avaliamos se a interação com as células HEp-2 poderia ser genotóxica para os mutantes derivados de Escherichia coli K-12 deficientes em algumas enzimas que fazem parte do sistema de reparo por excisão de base (BER). Além disto, avaliamos a expressão do sistema SOS, que é induzido pela presença de danos no genoma bacteriano. Os resultados obtidos mostraram a presença de filamentos, na interação com células HEp-2, principalmente, no mutante xthA (BW9091) e no triplo mutante xthA nfo nth (BW535). Quando a interação foi quantificada na ausência da D-manose, observamos um aumento das bactérias aderidas. Além disto, a quantidade e o tamanho dos filamentos também aumentaram, mostrando que as adesinas manose-sensíveis estavam envolvidas na filamentação bacteriana. Para comprovar se o aumento da filamentação observada neste ensaio foram uma consequência da indução do sistema SOS, desencadeada pela interação com as células HEp-2, quantificamos a expressão do SOS, na presença e na ausência da D-manose. De fato, observamos que a indução do SOS na ausência da D-manose foi maior, quando comparada, com o ensaio realizado na presença de D-manose. Além disto, observamos que a ausência de xthA foi importante para o aumento da filamentação observada na ausência de D-manose. Diante destes resultados, verificamos se a resposta de filamentação ocorreria quando as bactérias interagiam com uma superfície abiótica como o vidro. Observamos também inúmeros filamentos nos mutantes BER, BW9091 e BW535, quando comparados a cepa selvagem AB1157. Essa filamentação foi associada à indução do SOS, em resposta a interação das bactérias com o vidro. Em parte a filamentação e a indução do SOS observadas na interação ao vidro, foram associadas à produção de ERO. Quantificamos também o número de bactérias aderidas e observamos que as nossas cepas formavam biofilmes moderados. Contudo, a formação de biofilme dependia da capacidade da bactéria induzir o sistema SOS, tanto em aerobiose como em anaerobiose. A tensão do oxigênio foi importante para interação dos mutantes BER, uma vez que os mutantes BW9091 e BW535 apresentaram uma quantidade de bactérias aderidas menor em anaerobiose. Contudo, a diminuição observada não estava vinculada a morte dos mutantes BER. Também realizamos microscopia de varredura na cepa selvagem e nos mutantes, BW9091 e BW535 e confirmamos que as três cepas formavam biofilmes tanto em aerobiose como em anaerobiose. Observamos uma estrutura sugestiva de matriz extracelular envolvendo os biofilmes da cepa selvagem AB1157 e do mutante BW9091. No entanto, a formação desta estrutura por ambas as cepas dependia da tensão de oxigênio, pois nos biofilmes formados em anaerobiose essa estrutura estava ausente. Em conclusão, mostramos que na interação das bactérias com a superfície biótica e abiótica, ocorreu lesão no genoma, com indução do SOS e a resposta de filamentação associada.

SOS氧化硅栅ISFET特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

高压SOS/MOS场效应晶体管研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

改善SOS单晶膜质量的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

SOS器件及其材料改性的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

SOS/CMOS 模拟电路设计研究及其在DC/DC 转换器中的应用

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

SOS-CMOS DC-DC变换器研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy

Raman spectroscopy technique has been performed to investigate the stress induced in as-grown silicon-on-sapphire (SOS), solid-phase-epitaxy (SPE) re-grown SOS, and Si/gamma-Al2O3/Si double-heteroepitaxial thin films. It was demonstrated that the residual stress in SOS film, arising from mismatch and difference of thermal expansion coefficient between silicon and sapphire, was reduced efficiently by SPE process, and that the stress in Si/gamma-Al2O3/Si thin film is much smaller than that of as-grown SOS and SPE upgraded SOS films. The stress decrease for double heteroepitaxial film Si/gamma-Al2O3/Si mainly arises from the smaller lattice mismatching of 2.4% between silicon top layer and the gamma-Al2O3/Si epitaxiial composite substrate, comparing with the large lattice mismatch of 13% for SOS films. It indicated that gamma-Al2O3/Si as a silicon-based epitaxial substrate benefits for reducing the residual stress for further growth of silicon layer, compared with on bulk sapphire substrate. (c) 2005 Elsevier B.V. All rights reserved.

Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy

The increased emphasis on sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200 nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by the CVD method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal X-ray diffraction and electrical measurements. We concluded that the thin SPE SOS films are suitable for application to high-performance CMOS circuitry. (C) 2000 Elsevier Science S.A. All rights reserved.